Experimental verification of physical models for defect states in crystalline and amorphous ultrathin dielectric films
نویسندگان
چکیده
Defect states in different dielectric materials with crystalline and amorphous structures were investigated with two models, the Broer model and the Bloch model. For crystalline structures as in hafnium oxide, defects were found to fit well with the Broer model due to strong local magnetic-field-orientation dependency. In amorphous materials, for example, organosilicate glass, defects were found to fit to the Bloch model due to field broadening effects. Using the two models, behaviors of defects can be described as a result of electron spins. Defect concentrations and locations are determined.
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